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Reference
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Semiconductor Materials
Physical Properties, Chemical Properties and General Information
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Name | Molecular Formula | Dopants | Band Gap* / Energy Gap* | Use & Application |
Donors (n-type) | Acceptors (p-type) |
Elemental Semiconductors |
Silicon | Si | As P Sb | Al B Ga In | 1.12 eV (indirect, narrow) | computer chips, transistors, solar cells, semiconductor detectors, alloying, silicones |
Germanium | Ge | As P Sb Bi Li | Al B Ga In Tl | 0.661 eV (indirect, narrow) | infrared detectors, camera lenses, microscope objective lenses, high-efficiency multi-junction solar cells for space applications, radiation detectors, alloying, chemotherapy |
Diamond | C | N P | B | 5.46 (wide) | electrical insulators, prevention of silicon and other semiconductors from overheating, possible use for microchips or heat sink in electronics; drill bits and engraving tools |
Compound Semiconductors |
Gallium Arsenide | GaAs | S Se Si Ge Sn Te | C Si Ge Zn Sn | 1.424 eV (direct, narrow) | microwave frequency integrated circuits (MMICs), infrared light-emitting diodes, laser diodes, solar cells |
Indium Phosphide | InP | S, Si, Sn, Ge | C Hg Zn Cd Si Cu Be Mg Ge Mn | 1.344 eV (direct, narrow) | high-power and high-frequency electronics; optoelectronics devices like laser diodes |
Gallium Phosphide | GaP | Sp Se Te Li Ge Si Sn Li | Ge C Si Be Cd Mg Zn | 2.26 eV (indirect, wide) | light-emitting diodes (LED) |
Indium Arsenide | InAs | Se, S, Te, Ge, Si, Sn, Cu | Sn Ge Si Cd Zn | 0.354 eV (narrow) | infrared detectors, diode lasers |
Gallium Antimonide | GaSb | Te Se S | Si Ge Zn | 0.726 eV (narrow) | infrared detectors, infrared LEDs, lasers, transistors |
Aluminium Nitride | AlN | C, Ge, Se | C, Hg | 6.2 eV (wide) | optical storage media, high thermal conductivity electronic substrates, surface acoustic wave sensors (SAW's); potential application for deep ultraviolet optoelectronics |
Boron Nitride | BN | Si C S | Be | 6.2 eV (wide) | cubic boron nitride: ultraviolet LEDs, abrasive tools; hexagonal boron nitride: high-temperature lubricants |
Indium Antimonide | InSb | Se, S, Te | Cd Zn Cr Cu | 0.17 eV (narrow) | infrared detectors, thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, infrared astronomy |
Indium Nitride | InN |   |   | 0.7 eV (narrow) | potential application in solar cells and high speed electronics |
Gallium Nitride | GaN | Si | Mg Zn | 3.4 eV (direct, wide) | optoelectronic, high-power and high-frequency devices, solar cell arrays for satellites |
Alloy Semiconductors |
Aluminium Gallium Arsenide | AlxGa1-xAs |   |   | 1.42 - 2.16 eV (direct) | barrier material in GaAs based heterostructure device - quantum well infrared photodetector (QWIP) |
*
Semiconductors that have an indirect bandgap are inefficient at emitting light.
Semiconductors that have an direct bandgap are good light emitters.
A wide bandgap (WBG) semiconductor is a semiconductor with an energy band gap wider than about 2 eV, suitable for microwave devices.
A narrow bandgap semiconductor is a semiconductor with an energy bandgap narrower than about 2 eV suitable for tunnel devices and infrared technology.
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